Schottky diodes are named after their inventor Walter Hermann Schottky. Commonly used Schottky barrier diode (Schottky Barrier Diode, SBD) is made using the principle of metal-semiconductor junction formed by contact between metal and semiconductor. Therefore, SBD is also called a metal-semiconductor (contact) diode or a surface barrier diode, which is a hot carrier diode.
Schottky diodes are low-power, high-current, ultra-high-speed semiconductor devices. Their reverse recovery time is very short (can be as small as a few nanoseconds), and the forward voltage drop is only about 0.4V, while the rectified current can reach Thousands of milliamps. Because of its characteristics, it is used in crystalline silicon battery components as a bypass diode.